| 摘要 |
PURPOSE: A method for manufacturing a MOSFET transistor is to reduce a sheet resistance of a silicide layer, prevent a bridge effect and decrease the number of metal interconnections by commonly connecting a source or drain region of adjacent transistor. CONSTITUTION: A field oxide layer(102) is formed on a semiconductor substrate. The field oxide layer has a planarized surface to define an active region and an inactive region. A gate insulating layer and a gate electrode(104) are sequentially formed on the semiconductor substrate. An insulating spacer(106) is formed on a sidewall of the gate electrode. The first polysilicon is deposited on an entire structure. An impurity implantation process is performed to form a source/drain region(109,110) on a lower portion of the gate electrode. The second polysilicon layer are formed on the first polysilicon layer. A silicide layer is formed by reacting the first polysilicon layer and the second polysilicon layer. The gate electrode and the silicide layer are selectively removed to form a silicide pattern(116). An interlayer dielectric layer and a contact hole are formed. The contact hole is filled to form a metal electrode(122).
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