| 摘要 |
PURPOSE: A high potential detector is to detect more stable level of high potential by having no affect on a potential applied to a node even though the level of a power voltage is fluctuated. CONSTITUTION: A high potential supply(10) includes PMOS(p-channel metal oxide semiconductor) transistors connected in series to each other, a gate and drain of the transistor being short. A bias circuit(40) includes a PMOS transistor(41) driven by a bias voltage and supplying a power voltage(Vdd) to a high potential detecting node(detN), and a PMOS transistor(42) supplying the bias voltage to a current mirror through a load(43). The PMOS transistors of the high potential supply are driven by a potential of the current mirror in regardless of the power voltage. At that time, The power voltage is applied from the bias circuit to the high potential detecting node. If the bias voltage is applied to the PMOS transistor by adjusting a size of the load and PMOS transistor, the potential of the high potential detecting node is significantly reduced.
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