| 摘要 |
PURPOSE: A fuse box and a method for forming the same are to form an open region of fuse identical to the size of the fuse box by using a guard ring as a wet etching barrier. CONSTITUTION: A plurality of gate electrodes(32) are formed on a semiconductor substrate(31). The first interlayer dielectric(33), the second polysilicon layer(34), the first insulating layer(35), the first metal layer(36), the second interlayer dielectric(37), and the first photoresist layer are formed on the semiconductor substrate including the plurality of the gate electrodes. After selectively exposing and developing the first photoresist layer, the first and second contact holes are formed by selectively etching the second interlayer dielectric, using the exposed and developed first photoresist layer as a mask. Then, the first photoreist layer is removed. The first and second guard rings(40,41) are formed by burying the third polysilicon layer in the first and second contact hole. The second metal layer(42), a passivation layer(43), and the second photoresist layer are formed on the second interlayer dielectric including the first and second guard rings. A fuse open region(44) is formed by selectively etching the passivation layer, the second metal layer, the second interlayer dielectric, the first metal layer, the first insulating layer, the second polysilicon layer, and the first interlayer dielectric.
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