| 摘要 |
PURPOSE: A method for forming a contact hole in semiconductor devices is provided to prevent short between electrodes buried within a contact hole by growing a thermal oxide film in a gate electrode or a bit line that are exposed into the contact hole when the contact hole is formed. CONSTITUTION: The method for forming a contact hole in semiconductor devices forms a bit line contact hole or a lower electrode contact hole of a capacitor. Thermal oxide films(100) are grown in a substrate(10) exposed within the bit line contact hole or the lower electrode contact hole, a gate electrode(40) or a bit line. The thermal oxide films(100) formed on the substrate(10) are etched. The bit line contact hole or the lower electrode contact hole are buried to form bit lines and a lower electrode(110).
|
