METHOD FOR FORMING SILICIDE ON DOPED POLYCRYSTALLINE-SI POLYSIDE DUAL GATE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a silicide on doped polycrystalline-Si dual gate is provided to pattern CoSi2 having a good thermal stability and a low resistance characteristic with a simple process. CONSTITUTION: The method for forming a silicide on doped polycrystalline-Si dual gate forms polysilicon pattern layers on the first and second regions of a semiconductor substrate(21). A blocking layer is formed to expose an upper side of the polysilicon pattern layer. A cobalt layer is formed on the entire surface and is then annealed to form a gate electrode in which the polysilicon pattern layer and a cobalt silicide layer(34) are stacked. Impurity ions having opposite conductive types are implanted into the first and second regions, respectively, and are then annealed to form source/drain regions(30,31) within the surface of the substrate at the both sides of the gate electrode. Gate ion ions are implanted into the polysilicon pattern layer.