COOLING STATION OF LOADLOCK CHAMBER FOR CHEMICAL VAPOR DEPOSITION PROCESS

摘要

PURPOSE: A cooling station of a loadlock chamber for the chemical vapor deposition process is provided which not only enables loading and unloading of a wafer nicely but also does not cause damage of the wafer by expanding the inserting and receiving space for a wafer. CONSTITUTION: In a cooling station of a loadlock chamber for the chemical vapor deposition process comprising N units of receiving stations (30) installed between the upper and lower plates (10,20) so as to insert and safely receiving a plurality of wafers (50), and inserting grooves having a height of H formed between the receiving stations, the cooling station of a loadlock chamber for the chemical vapor deposition process is characterized in that the receiving stations (30) are reduced to (N-ΔN) units so that loading and unloading of a wafer is easily performed, and the inserting grooves are expanded so that the inserting grooves (34) have a width of (H+ΔH), wherein a unit variation (ΔN) of the receiving stations is from 1 to 6, and a width variation (ΔH) of the inserting grooves is from 2 to 6 mm.