发明名称 HIGH VOLTAGE GENERATOR OF FLASH MEMORY DEVICE
摘要 PURPOSE: A high voltage generator is provided to generate a high gate voltage by increasing the swing width of an input terminal of a capacitor even though capacitors connected in series are used. CONSTITUTION: The high voltage generator includes the first and second precharge portions(10,30), a discharge portion(20) and the first and third capacitors(C1,C2,C3). The second precharge portion precharges an output terminal with a supply voltage level in response to the second boost signal(signal2). The discharge portion discharges the voltage of the first node in response to the third boost signal(signal3). The first capacitor boosts the first node in response to the third boost signal. The second capacitor connects the output terminal with the first node. The first precharge portion precharges the first node and boosts the voltage of the output terminal by the voltage width varied at the first node by varying the voltage of the first node in response to the first and second boost signals. The third capacitor stabilizes the output signal(OUT).
申请公布号 KR20010065157(A) 申请公布日期 2001.07.11
申请号 KR19990065026 申请日期 1999.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JIN, GYEONG CHEON
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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