METHOD FOR FORMING PATTERN IN SEMICONDUCTOR MANUFACTURING PROCESS

摘要

PURPOSE: A method for forming a pattern in a semiconductor manufacturing process is provided to remove fully a scum generated from a photoresist pattern formation process by performing ultra violet ray processing. CONSTITUTION: A processing layer(32) is formed on a semiconductor substrate(30). A photoresist layer is formed on the processing layer(32). A patterned mask pattern is formed on an upper portion of the photoresist layer. The light is irradiated selectively on the photoresist layer. The photoresist layer is developed selectively by using a development solution. A photoresist pattern(34a) is formed on an unexposed portion of the photoresist layer(34a). The processing layer(32) is processed by using a ultra violet ray(38).