| 摘要 |
PURPOSE: A gate electrode structure of a T type of a semiconductor device is provided to form a projecting part which is projected in a source area to a thickness thinner than a projecting part which is projected in a drain area in a gate electrode of a T type and improve the characteristic of a device by lowering a resistance of a source side to reduce a hot carrier characteristic so an ion is easily permeated in an LDD area side when an ion implantation is performed to form a source area. CONSTITUTION: The gate electrode structure is a structure that both sides, a source side and a drain side, of a gate electrode(40) are projected. A projecting part in a direction of the source area(60) at the gate electrode is formed thinner than that in a direction of the drain area(70). Accordingly, an ion is flowed into inside of an LDD area(30), thereby the range of the source area widens.
|
