| 摘要 |
PURPOSE: A manufacturing method of a substrate for a reflection type micro LCD is provided to obtain a reflection layer having reflectance of 90% or more by depositing an aluminum layer under the temperature of 150 deg.C or less. CONSTITUTION: First, TFTs comprising a gate, a semiconductor pattern, a source and a drain(10) are formed on a Si-wafer. Then, a contact hole(21) exposing the drain(10) is formed by depositing and patterning an insulating layer(20) on the wafer, and then a barrier metal layer(30) is deposited. Next, a tungsten layer(40) is deposited and then is planarized to expose the insulating layer. Then, a nitride Ti-layer(50) is deposited on the insulating layer(20) and the tungsten layer(40). Next, a reflection layer(60) is formed by depositing an aluminum layer on the nitride Ti-layer under the temperature of 150 deg.C or less. |
