METHOD FOR FORMING INTER-METAL DIELECTRIC FILM IN DAMASCENE PROCESS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an Inter-Metal Dielectric film in a damascene process of a semiconductor device is provided to make high integration a semiconductor device in a simple process as forming an IMD film with a double structure composed of an oxide film and a fluorinated amorphous carbon layer in a damascene process of a semiconductor device. CONSTITUTION: The method includes a damascene process for forming fine metal line patterns of a semiconductor device. In the method, an IMD film(25) between the fine metal line patterns is formed with a stacked structure in which a silicon oxide film(25A) and a fluorinated amorphous carbon layer(22B,25B,29A) are deposited. The silicon oxide film is a high density plasma USG film and formed by implanting a boron ion or a phosphorus ion. The fluorinated amorphous carbon layer is formed using C4F8 and CH4 or CF4 and CH4 as a source gas.