METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL GROWTH OF SILICON

摘要

PURPOSE: A method for manufacturing a semiconductor device is to alter only the shape of a pattern material without a variation of a selective epitaxial growth of silicon, thereby enhancing the selectivity and decreasing an occurrence of defects. CONSTITUTION: A nitride film is deposited on a semiconductor substrate(100) and is patterned to form a nitride film pattern(10) for exposing a part of the semiconductor substrate. An oxide film(14) is formed on the entire surface of the resultant structure. The oxide film is blanket-etched to expose the surface of the substrate between the nitride film pattern. The exposed substrate is subject to a selective epitaxial growth to form an epitaxial growth film(16). The nitride film pattern includes a capping film formed on a selected portion of the substrate or a spacer enclosing the capping film and a predetermined pattern. The oxide film is formed with a step coverage of 60% or less.