METHOD FOR FORMING GATE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate is to control a critical dimension of the gate when the gate is formed in a semiconductor device, thereby shortening a process time and enhancing the production yield. CONSTITUTION: A polycrystalline silicon film is formed on a semiconductor substrate. A BARC(Backside anti-reflection coating) film is deposited on the polycrystalline silicon film. A photoresist pattern for the formation of a gate is formed on a selected portion of the BARC film. A critical dimension(CD) of the photoresist pattern is measured. An etch time is controlled by considering data of a prior process. The BARC film and the underlying polycrystalline silicon film are etched by using the photoresist pattern as an etch mask to form a gate. The photoresist pattern and the underlying BARC film are removed. A critical dimension of the gate is measured.