METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE PREVENTING CRACK OF BARRIER NITRIDE LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to guarantee stability of a manufacturing process and to increase yield, by preventing a crack on a barrier nitride layer generated in a subsequent heat treatment process. CONSTITUTION: A bit line is formed on a semiconductor substrate. A planarization layer having a contact hole and the first interlayer dielectric are formed on the semiconductor substrate including the bit line. A plug poly is formed in the contact hole. A barrier nitride layer and the second interlayer dielectric are formed on the first interlayer dielectric to expose a part of the first interlayer dielectric. A capacitor is composed of a storage node electrode formed on the exposed portion of the first interlayer dielectric, a dielectric layer formed on the entire surface and a plate electrode. The first interlayer dielectric has a thickness from 1000 to 2000 angstrom. The second interlayer dielectric has a thickness from 1500 to 2000 angstrom.