METHOD FOR FORMING SILICON WAFER FOR GOI EVALUATION

摘要

PURPOSE: A method for forming a silicon wafer for GOI(Gate Oxide Intefrity) evaluation is provided to check a GOI by performing a pre-thermal budget annealing process. CONSTITUTION: A thermal oxide layer(102) of 80-300 angstrom is formed on a silicon substrate(101). A pre-thermal budget annealing process(103) is performed. A post-thermal process is performed. The post-thermal process is performed continuously during 30 minutes under a temperature more than 1000 degrees centigrade. The previous oxide layer is removed. A gate oxide layer is grown as much as 50 to 500 angstrom. The first polysilicon used as an electrode is deposited on the gate oxide layer. A photoresist pattern is formed thereon. The first polysilicon layer and the gate oxide layer are removed from an opened region. An annealing process is performed.