发明名称 SDRAM
摘要 PURPOSE: An SDRAM(Synchronous DRAM) is provided to reduce a peak current value by making the point of time of activation of both left and right sense amps different when refresh operation is performed at an SDRAM cell. CONSTITUTION: The SDRAM includes a plurality of SDRAM cells, a word line driver(30), sense amps(S/A(L),S/A(R)), the first sense amp controller(32) and the second sense amp controller(31). The SDRAM cells are arrayed in a matrix form. The word line driver drives any word line of the plurality of SRAM cells. The sense amps positions to both sides(left and right) of the SDRAM cell array. The first sense amp controller outputs first and second signals for controlling the driving of the left and right sense amps. The second sense amp controller makes the point of time enabling the left and right sense amps differently as dividing the first and second signals outputted from the first sense amp controller into the 1-1th and 1-2th signals and the 2-1th and 2-2th signals which have the difference of time respectively to delay.
申请公布号 KR20010065630(A) 申请公布日期 2001.07.11
申请号 KR19990065546 申请日期 1999.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YONG HWAN
分类号 G11C11/413;(IPC1-7):G11C11/413 主分类号 G11C11/413
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