| 摘要 |
PURPOSE: A charge coupled device and a method for manufacturing the same are provided to prevent an inferior charge coupled device by removing residues due to thickness difference between boundary regions of transfer gates of a horizontal charge coupled device. CONSTITUTION: A gate insulating layer(32) of an ONO(Oxide-Nitride-Oxide) structure is formed on a substrate(31). A field oxide layer(33) is formed on one side of the gate insulating layer(32) and an active region of the first and the second transfer gates by performing a LOCOS(LOCal Oxidation of Silicon) process. The first polysilicon is deposited on the whole structure. The first transfer gate is formed to one line direction. An oxide layer is formed on a surface of the first transfer gate by performing an oxidation process. The second polysilicon is deposited thereon. The second transfer gates(34a,34b) are formed by etching the second polysilicon.
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