| 摘要 |
PURPOSE: A CCD(Charge Coupled Device) sensor and a method for manufacturing the same are provided to perform easily an etching process by forming the second and third poly gates on a horizontal CCD to overlap the second and the third poly gates the first poly gate of an interface area. CONSTITUTION: The first poly gates(33) are formed on a vertical CCD according to a predetermined interval. The first poly gate(33) is formed on an end portion of the vertical charge coupled device. The second poly gates(34) are formed on the vertical charge coupled device by overlapping the first poly gates(33). The second poly gates(34) are formed on a horizontal charge coupled device according to a predetermined interval. The third poly gate(35) is formed on the vertical CCD by overlapping the first and second poly gates(33,34). The third poly gate(35) is formed on the horizontal CCD by overlapping the second poly gate(34). The second and third poly gates(34,35) of the horizontal area are overlapped on the first poly gate(33) of the end portion of the vertical CCD.
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