| 摘要 |
A semiconductor memory device includes a substrate, a first insulation layer formed on the substrate, a plurality of bit lines arranged on the first insulation layer, a second insulation layer formed all over the bit lines and having a plurality of first openings, an element isolating region formed on the second insulation layer, a plurality of island-like element forming semiconductor regions formed as surrounded by the element isolating region, a plurality of transistors respectively formed in the element forming semiconductor regions, and a plurality of capacitors respectively formed on the transistors. Each of the transistors includes a gate electrode insulatively formed on the element forming region, and a first and a second diffusion region formed on either side of the gate electrode, the first diffusion region being connected to a corresponding one of the bit lines through a via conductor formed in one of the first openings. Each of the capacitors has a storage electrode formed on the second diffusion region of each of the transistors.
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