| 发明名称 |
Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
| 摘要 |
A semiconductor device using a TFT including a multilayered gate electrode and an LDD region partially overlapping with the multilayered gate electrode via a gate insulating film is provided.
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| 申请公布号 |
US6259138(B1) |
申请公布日期 |
2001.07.10 |
| 申请号 |
US19990464189 |
申请日期 |
1999.12.16 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
OHTANI HISASHI;YAMAZAKI SHUNPEI;ITOH MASATAKA |
| 分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
G02F1/1362 |
| 代理机构 |
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