| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element and its manufacturing method, by which material cost can be reduced and an appropriate characteristic also obtained by using an inexpensive material for a substrate. SOLUTION: This solid-state image pickup element 10 is provided with pixels, having a photosensor PS and a semiconductor switching element 20 on a semiconductor thin film 15 formed by the catalyst CVD method on the plane of a light-transmitting substrate 11 provided with steps. In addition, this manufacturing method includes a step to form a semiconductor thin film 15 on the substrate 11 having steps for determining the crystal orientation on one plane, through the catalyst epitaxial growth, and a step to form the photosensor PS and semiconductor switching element 20 constituting the pixels on the semiconductor thin film 15.
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