| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, without characteristic deterioration caused by carrier accumulation, when silicon functions as a donor or caused by deterioration in surface morphology. SOLUTION: A semiconductor device includes a GaAs substrate 1 or a first GaAs epitaxial base film 7 formed on the GaAs substrate 1, and a second or more GaAs epitaxial layers 3 and 4 formed on the substrate 1 or on the base film 7. After the silicon and the silicon compound 5 exist on the surface of the substrate 1 or the base film 7 are surface-treated with aqueous ozone, the second or more GaAs epitaxial layers 3 and 4 are made grown to form the semiconductor device.
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