| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element, together with its manufacturing method, where the reliability of the phased layer of UBM(under bump metallurgy) is assured, while reducing the cost. SOLUTION: A semiconductor substrate 10 comprising a conductive electrode pad 11 is provided. A UBM50 is provided, where a first metal layer 51 which is a lower layer and formed on the electrode pad 11, a third metal layer 55 which is an upper layer, and a phased layer 53 between them are constituted and related to the phased layer 53, second metal layers 151 and 251 of the same material as the first metal layer 51 and fourth metal layers 155 and 255 of the same material as the third metal layer 55 are laminated alternately, with the thickness of the second metal layers 151 and 251 becoming gradually thinner, proceeding from the first metal layer 51 to the third metal layer 53, while the thickness of fourth metal layers 155 and 255 becomes gradually thicker, proceeding from the first metal layer 51 to the third metal 55. Furthermore, a conductive bump 41 formed on the UBM50 is provided. |
