| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a Cu channel wiring together with its manufacturing method, where the base material layer for electrolytic plating which is of low resistance and satisfactory step coverage is formed. SOLUTION: A wiring channel 2 is formed on the surface of an interlayer insulating film 1 through RIE. Then a laminated film is film-formed continuously, in the same chamber within the wiring channel 2. First, a first WN film 3 is formed by a thermal CVD method using gases such as WF6, NH3, and H2, and a W film 4 is formed with only NH3 gas being cut off, and then the NH3 gas is re-introduced to form a second WN film 5. With the laminated film as a base material layer for Cu deposition, a Cu is formed through electrolytic plating method, and the wiring channel 2 is embedded with a Cu film 6. Then the laminated film on the interlayer insulating film 1, which comprises the Cu film 6, second WN film 5, W film 4, and first WN film 3, is removed by CMP method, etc., to form a channel wiring 7. |
