发明名称 STANDARD CELL AD SEMICONDUCTOR INTEGRATED CIRCUIT EQUIPPED WITH THE SAME
摘要 PROBLEM TO BE SOLVED: To lessen a power supply wiring and a GND wiring in the dedicated area in an LSI. SOLUTION: A first metal layer is made to serve as a standard cell GND wiring 1, and a second metal layer is made to serve as a standard cell power supply wiring 2a, that is, two different wiring layers are provided, by which the wiring layers can be laminated easily, and the power supply wiring and the GND wiring can be lessened in dedicated area. A first metal layer is made to serve as a GND main line for feeding electrons to the standard cell GND wiring 1, and a second metal layer is made to serve as a power supply main line for feeding electric charge to the standard cell power supply wiring 2a, by which an inter-wiring layer transfer will not be made between the standard cell GND wiring 1 and the GND main line and between the standard cell power supply wiring 2a and the power supply main line, and the power supply wiring and the GND wiring can be reduced to an irreducible minimum in wiring resistance.
申请公布号 JP2001189427(A) 申请公布日期 2001.07.10
申请号 JP20000000493 申请日期 2000.01.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TAKASAO KAZUHIRO;TAGUCHI SEIICHI
分类号 H01L21/822;H01L21/82;H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L21/822
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