| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor film forming method for forming a high- quality semiconductor film on a substrate. SOLUTION: A semiconductor film forming method for forming a semiconductor film on a substrate by utilizing a bias catalyzer CVD, a high-density bias catalyzer CVD, a bias reduced-pressure CVD, or a bias ordinary-pressure CVD. The method has a process wherein a raw-material gas is fed to a vacuum vessel 1 and a voltage which is not higher than a glow-discharge starting voltage is so applied across a substrate 10 and an electrode 3a, which are disposed in the vacuum vessel 1 as to form a semiconductor film and an insulation film on the substrate 10, a processor for projecting a laser on the semiconductor film and the insulation film for annealing the films, and a process preceded by this annealing process, where the films are annealed with a water steam.
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