| 摘要 |
A method for fabricating a very thin oxide film, such as a gate oxide film of a MOS transistor, by oxidizing a substrate, which method can accurately and easily control the thickness of the oxide film to a desired value. The method comprises controlling thickness of the oxide film to be formed, by adjusting partial pressure of oxygen in an ambient including oxygen, without changing temperature of oxidation of said substrate and time of oxidation of said substrate. Alternatively, the method comprises controlling thickness of the oxide film to be formed, by adjusting only pressure of an oxidizing ambient, without changing temperature of oxidation of said substrate and time of oxidation of said substrate.
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