| 摘要 |
1,181,486. Zone-melting. SIEMENS A.G. 8 March, 1968 [9 March, 1967], No. 11568/ 68. Heading B1S. A dislocation-free monocrystalline rod of silicon is produced by passing a molten zone through a polycrystalline charge rod from a rotating seed, the (111)-axis of which is inclined at an angle 8 of 0.5-5‹ to its axis of rotation and causing a constriction in the charge rod near the seed. The monocrystalline rod may have a diameter or 30 mm or more. The seed is inclined at the required angle by passing a beam of light through an aperture in a disc 6 mounted in place of the rod to be zone-melted and reflecting the beam from the end surface of the seed (which is etched) onto the disc to form a light pattern 10. When the seed projects downwards, the light pattern is rotated to the position shown in Fig. 2. When the seed crystal projects upwards the light pattern is rotated to the position shown in Fig. 3. |
