| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method of manufacturing it, where the memory device can be improved in yield by reducing the number of manufacturing processes, restrained from increasing in cost, and enhanced in performance and reliability. SOLUTION: An interlayer dielectric 29 is formed after a plate electrode 28 is formed, and a CMP operation is carried out, using the plate electrode 28 on an SiO2 film 34 formed in a peripheral circuit region 56 as a stopper to make the surface flat. With this setup, the plate electrode 28 is exposed in the peripheral region 56, the interlayer dielectric 29 results in appearing in the peripheral part 55 of a memory cell array region 54, and the interlayer dielectric 29 functions substantially as an etching mask. Therefore, an etching mask is formed, and etching can be carried out, without the use of a patterning process by a lithography technique. |
