| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor nonvolatile memory, in which the density of charge trap contained in a silicon nitride film composing the multilayer insulation film of the semiconductor nonvolatile memory having charge storage capability can be controlled. SOLUTION: A silicon oxide film 21 is formed on a semiconductor substrate 10, having a channel forming region and a silicon nitride film 22, is formed thereon as a part of a multilayer insulation film by CVD, using dichlorosilane and ammonia as material. It is then heat treated in gas atmosphere containing hydrogen and nitrogen, e.g. ammonia gas, and further heat treated in the atmosphere of N2O gas. Subsequently, a silicon oxide film 23 is formed on the surface of the silicon nitride film 22 through thermal oxidation thus forming a multilayer insulation film of an oxide film-a nitride film-an oxide film having charge storage capability. Thereafter, a control gate electrode is formed on the upper layer of the multilayer insulation film and a source/drain region is formed to be connected with a channel-forming region in the substrate.
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