| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where with an ESD breakdown voltage provided, and a capacity element of a large capacity is formed in a small area. SOLUTION: A first wiring layer 1 is provided with a first electrode 10 and a second electrode 20, comprising a plurality of comb-tooth parts 11 (21) formed into a comb shape and a connection part 12 (22) for connecting the comb-tooth parts 11 (21). A second wiring layer 2 is provided with third electrode 30 and fourth electrode 40 comprising a plurality of comb-tooth parts 31 (41) formed in comb and a connection part 32 (42) for connecting the comb- tooth parts 31 (41). The third and fourth electrodes 30 and 40 are so arranged as nested each other, with the four electrodes 10-40 forming a single capacitive element. |
