发明名称 |
Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk |
摘要 |
A method of manufacturing a semiconductor device has a step whereby, when forming a gate oxide film, a thin oxide film is left on a silicon substrate onto which it is formed and whereby a heavy metal at the surface of the silicon substrate is diffused into the substrate, and a step of forming a gate oxide film onto the silicon substrate.
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申请公布号 |
US6258635(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19980164970 |
申请日期 |
1998.10.01 |
申请人 |
NEC CORPORATION |
发明人 |
MIYOSHI KOUSUKE;SHISHIGUCHI SEIICHI |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/316;H01L21/322;H01L21/324;(IPC1-7):H01L21/335 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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