发明名称 |
Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity |
摘要 |
A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.
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申请公布号 |
US6258710(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19990459167 |
申请日期 |
1999.12.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RATHORE HAZARA S.;DALAL HORMAZDYAR M.;MCLAUGHLIN PAUL S.;NGUYEN DU B.;SMITH RICHARD G.;SWINTON ALEXANDER J.;WACHNIK RICHARD A. |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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