| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove or reduce impurity elements in the vicinity of the junction of a thin-film transistor. SOLUTION: The impurity element, such as a 3d transition metal, can be moved into a region far from the junction regions of a channel-forming region and a drain region by doping the element represented by P(phosphorus) in a region, in which source/drain are formed, and forming a gradient to the concentration distribution. That is, the impurity element in the vicinity of the junction regions can be gettered effectively, by lowering the concentration of the element represented by P in sections close to the junction regions and enhancing the concentration of the element represented by P in sections separated from the junction regions.</p> |
