发明名称 MANUFACTURING METHOD FOR MAGNETO-RESISTANCE EFFECT THIN-FILM
摘要 PROBLEM TO BE SOLVED: To cope with a narrow gap by using a thinner film thickness. SOLUTION: An anti-ferromagnetic layer 7 of a spin valve film 1 is film- formed to a thickness equal to a critical film thickness which has been known. Then the anti-ferromagnetic layer 7 is thermally processed before etching. Thus, the entire film thickness of spin valve film 1 can be thinner while the switched connection magnetic field at the anti-ferromagnetic film 7 is held.
申请公布号 JP2001189505(A) 申请公布日期 2001.07.10
申请号 JP19990375341 申请日期 1999.12.28
申请人 SONY CORP 发明人 MAKINO EIJI;KATAKURA TORU
分类号 G11B5/39;H01F10/32;H01L43/12;(IPC1-7):H01L43/12 主分类号 G11B5/39
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