发明名称 |
MANUFACTURING METHOD FOR MAGNETO-RESISTANCE EFFECT THIN-FILM |
摘要 |
PROBLEM TO BE SOLVED: To cope with a narrow gap by using a thinner film thickness. SOLUTION: An anti-ferromagnetic layer 7 of a spin valve film 1 is film- formed to a thickness equal to a critical film thickness which has been known. Then the anti-ferromagnetic layer 7 is thermally processed before etching. Thus, the entire film thickness of spin valve film 1 can be thinner while the switched connection magnetic field at the anti-ferromagnetic film 7 is held.
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申请公布号 |
JP2001189505(A) |
申请公布日期 |
2001.07.10 |
申请号 |
JP19990375341 |
申请日期 |
1999.12.28 |
申请人 |
SONY CORP |
发明人 |
MAKINO EIJI;KATAKURA TORU |
分类号 |
G11B5/39;H01F10/32;H01L43/12;(IPC1-7):H01L43/12 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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