System and method for fabricating semiconductor device and isolation structure thereof

摘要

A method for fabricating a semiconductor device and an isolation structure thereof is disclosed. The isolation structure of a semiconductor device includes a first isolation step for forming a line-shaped active region on a semiconductor substrate wherein the line-shaped active region is consecutive in a lengthy direction, and a second isolation step for electrically isolating the line-shaped active regions in a lengthy direction by a predetermined length for thereby overcoming the problems such as a rounded corner portion problem, a pattern length decrease, etc. and enhancing the integrity of the semiconductor device.