发明名称 |
Pattern formation method and surface treating agent |
摘要 |
To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.
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申请公布号 |
US6258972(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US19960691124 |
申请日期 |
1996.08.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NAKAOKA SATOKO;ENDO MASAYUKI;OHSAKI HIROMI;KATSUYAMA AKIKO |
分类号 |
G03F7/075;(IPC1-7):C07E7/08 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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