| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film capacitor which is suitably used, even for a small integrated circuit, superior in crystallininty, restrained from deteriorating in resistance, and stable in characteristics. SOLUTION: A dielectric thin film, that forms a thin film capacitor is formed of oxide dielectric which is represented by a general formula, ABO3 as the chemical formula, the oxide dielectric is manufactured through an ECR sputtering method, and the dielectric thin film has a composition that satisfies the expression 0.82<=A/B<=0.97. |
