| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed bipolar transistor, together with its manufacturing method which is easily manufactured. SOLUTION: Related to a bipolar transistor, an external base region is formed of a base region 4B, having low impurity concentration and a heavily-doped external base region 8 with high impurity concentration, so that the resistive contact in the external base region is satisfactory, reducing parasitic capacity between a base and collector. Related to the manufacturing method for a bipolar transistor, the external base region is formed into a heavily-doped region and a lightly-doped region at a ratio between them, by only changing the layout pattern of the heavily-doped external base region 8, so that the number of manufacturing processes will not increase, resulting in easier manufacture and shorter construction period.
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