| 摘要 |
The present invention relates to a method of formation of a conductive line on integrated circuits including the steps of etching a first insulator layer to create therein openings of predetermined width at the locations where the conductive line is to be formed; depositing and etching a first interconnection layer of a first thickness; and depositing and etching a second interconnection layer of a second thickness; the predetermined width being higher than twice the greatest of the two thicknesses, and lower than twice the sum of the thicknesses.
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