发明名称 MOUNTING STRUCTURE AND MOUNTING METHOD FOR HIGH- FREQUENCY SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To suppress degradation in characteristics as much as possible for satisfactory workability by shortening the metal wire for wiring, without damaging the electrical characteristics or thermal conductivity when a high-frequency semiconductor device and a connection board are mounted on a pedestal. SOLUTION: A pedestal 3, a connection board 1 which is tightly fitted to it and provided with a through-hole 9, and a high-frequency semiconductor device 2 are provided. The through-hole 9 is filled with a metal 7 of satisfactory conductivity and thermal conductivity, while being oval in shape, which is long in the direction perpendicular to an input/output signal line. A wiring pattern 4 is provided on the connection board 1 and the high-frequency semiconductor device 2 is die-bonded on the metal later 7 packed into the through-hole 9, with the high-frequency semiconductor device 2 electrically connected to the connection board 1 using a wire 5.</p>
申请公布号 JP2001189404(A) 申请公布日期 2001.07.10
申请号 JP19990373011 申请日期 1999.12.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ARAKI TARO;NOGAMI HIROYOSHI;KUROSHIMA YUTAKA
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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