发明名称 RETICLE FOR ALIGNMENT, EXPOSURE METHOD AND SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To offer reticles for alignment, an exposure method and semiconductor elements, thereby reducing the number of reticles in manufacturing semiconductor elements by split alignment, without requiring reticles for the exposure corresponding to the number of split x alignment steps without increasing the manufacturing cost and without a difficult design. SOLUTION: An element pattern is divided into periodical patterns and marginal patterns, and these patterns are arranged on the same reticle in this invention. For exposure, this reticle is prepared and when the periodical pattern is exposed, the marginal pattern is masked and when the marginal pattern is exposed, the periodical pattern is masked.</p>
申请公布号 JP2001189254(A) 申请公布日期 2001.07.10
申请号 JP19990372323 申请日期 1999.12.28
申请人 NIKON CORP 发明人 KOMAI ATSUSHI
分类号 H01L21/027;G03F1/68;(IPC1-7):H01L21/027;G03F1/08 主分类号 H01L21/027
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