发明名称 FLASH MEMORY ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a flash memory element which can read out the other sector during programming/erasing. SOLUTION: This element comprises a bank register selecting a program/ erasion state of each bank, a mode control section outputting a mode signal of a bank selected by the bank register, an address section separating/ independing external addresses to internal addresses respectively based on an output of the bank register, and many banks performing simultaneously program/erasion and read-out operation based on the mode signal and the internal addresses.</p>
申请公布号 JP2001189092(A) 申请公布日期 2001.07.10
申请号 JP20000390126 申请日期 2000.12.22
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 RI SHOSO
分类号 G11C16/06;G11C8/12;G11C16/02;G11C16/08;G11C16/10;(IPC1-7):G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址