SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser element in which operating speed is increased sufficiently. SOLUTION: A carrier storage preventive layer 8 having a striped opening section in the top face of a ridge section, a low carrier concentration layer 9 and an N-current block layer 10 are formed successively on a P-clad layer 6 with a ridge section. The low carrier concentration layer 9 has carrier concentration lower than the N-current block layer 10. The band gap of the carrier storage preventive layer 8 is set between that of the p-clad layer 6 and that of the low carrier concentration layer 9.