发明名称 |
Process for forming insulating structures for integrated circuits |
摘要 |
A process for forming insulating structures for integrated circuits that includes depositing a silicon oxide layer; shaping the silicon oxide layer to form first delimiting walls of the insulating regions substantially perpendicular to the substrate; and shaping the silicon oxide layer to form second delimiting walls inclined with respect to the substrate. The first walls have an angle of between approximately 70° and 110° with respect to the surface of the substrate; the second walls have an angle of between approximately 30° and 70° with respect to the surface of the substrate 11. The first delimiting walls are formed using a first mask and etching anisotropically first portions of the oxide layer; the second delimiting walls are formed using a second mask and carrying out a damage implantation for damaging second portions of the oxide layer and subsequently wet etching the damaged portions.
|
申请公布号 |
US6258701(B1) |
申请公布日期 |
2001.07.10 |
申请号 |
US20000481099 |
申请日期 |
2000.01.11 |
申请人 |
STMICROELECTRONICS S,R.L. |
发明人 |
DEPETRO RICCARDO;PALMIERI MICHELE |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|