| 摘要 |
A method of a self-alignment process to enhance the yield of borderless contact is described. The method provides a two-step, selective etching process, using the difference in the etching selectivities of the inter-metal dielectric layer and the barrier layer. The barrier layer is used as an etching stop layer, and a portion of the inter-metal dielectric layer is removed to form a contact window. The barrier layer and the inter-metal dielectric layer on the bottom of the contact window are removed, and then a borderless contact according to the invention is complete.
|
