SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device in which abnormal growth in the vicinity of a butt-joint section can be prevented. SOLUTION: The first layer composed of the first semiconductor material is grown on the main surface of a semiconductor substrate. The second layer comprising the second semiconductor material having etching resistance different from the first semiconductor material is grown on the first layer. The third layer consisting of the third semiconductor material having etching resistance different from the second semiconductor material is grown on the second layer. A partial region in the surface of the third layer is covered with a mask pattern. The third layer is etched using the mask pattern as an etching mask. The exposed second layer is etched while the second layer in the lower section of the mask pattern is etched in the lateral direction, and the mask pattern is left in an eaves shape. The first layer is etched using the second layer as the etching mask. The fourth layer is grown selectively under conditions in which the fourth layer is grown on a region removed in the first layer.