| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor memory device, which contains a carrier improved in polarization characteristics, shot-fail properties, and leakage current characteristics. SOLUTION: A ferroelectrics memory device manufacturing method comprises a first step, in which an active matrix is provided, second step in which a first conductive film and a dielectric film are formed on the active matrix, third step in which a fast heat treatment is carried out for forming nucli in the dielectric film, a fourth step in which a second conductive film is formed on the dielectric film, fifth step in which a thermal treatment is carried out in an oven, sixth step in which a capacitor structure composed of an upper electrode, capacitor thin film, and a lower electrode is formed, seventh step in which a first recovery thermal treatment is carried out, eighth step in which a third insulating film is formed on the capacitor structure and the second insulating film, ninth process in which a first opening and a second opening are bored in the third insulating film through patterning, and tenth step in which a second recovery thermal treatment is carried out.
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