| 摘要 |
PROBLEM TO BE SOLVED: To continue to hold stored information even if it is affected by heat, hydrogen, and the like in a manufacturing stage, with respect to a semiconductor memory provided with ferroelectric storage elements. SOLUTION: This device is provided with a first ferroelectric storage element for writing data after mounting a substrate, and a second ferroelectric storage element of which capacity is larger than that of the first ferroelectric storage element, the second ferroelectric storage element is used as a storage element for writing cipher and the like in a manufacturing stage. The second ferroelectric storage element is constituted by combining plural first ferroelectric storage elements. Therefore, word lines themselves and plate lines themselves are short-circuited over plural rows of memory cells. Or bit lines themselves are short-circuited over plural columns of memory cells.
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