发明名称 |
POSITIVE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive photoresist composition having high resolving power in the production of a semiconductor device, having evaluation with the same light exposure near the margin of resolution by which the size in which a nondense pattern vanishes and the marginal resolution size of a dense pattern show approximate values closer to each other and ensuring low surface roughness of a line pattern. SOLUTION: The positive photoresist composition contains a resin containing repeating units with a specified structure and having solubility to an alkali developing solution increased by the action of an acid, a compound which generates the acid when irradiated with active light or radiation and an organic solvent which dissolves the above components. |
申请公布号 |
JP2001188348(A) |
申请公布日期 |
2001.07.10 |
申请号 |
JP20000303875 |
申请日期 |
2000.10.03 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO |
分类号 |
G03F7/039;C08F220/10;C08F222/00;C08F230/08;C08K5/00;C08L33/04;C08L35/00;C08L43/04;G03F7/004;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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