发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive photoresist composition having high resolving power in the production of a semiconductor device, having evaluation with the same light exposure near the margin of resolution by which the size in which a nondense pattern vanishes and the marginal resolution size of a dense pattern show approximate values closer to each other and ensuring low surface roughness of a line pattern. SOLUTION: The positive photoresist composition contains a resin containing repeating units with a specified structure and having solubility to an alkali developing solution increased by the action of an acid, a compound which generates the acid when irradiated with active light or radiation and an organic solvent which dissolves the above components.
申请公布号 JP2001188348(A) 申请公布日期 2001.07.10
申请号 JP20000303875 申请日期 2000.10.03
申请人 FUJI PHOTO FILM CO LTD 发明人 MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO
分类号 G03F7/039;C08F220/10;C08F222/00;C08F230/08;C08K5/00;C08L33/04;C08L35/00;C08L43/04;G03F7/004;G03F7/075;H01L21/027 主分类号 G03F7/039
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